[ETNEWS](2020.12.27) [기고]시스템반도체 전문 연구인력 양성 절실하다

[NEWS1](2020.11.27) 차세대 SiC반도체 정전기 방전 최소화 기술 세계 최초 개발

"A 4H-SiC MOSFET-based ESD Protection with Improved Snapback Characteristics for High Voltage Applications"

IEEE Transactions on Power Electronics 

2021

"A Novel Low Dynamic Resistance Dual -Directional SCR with High Holding Voltage for 12 V Applications"

IEEE Transactions on Electron Devices

November, 2020

"Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection"

IEEE Electron Device Letters

November, 2020