단국대학교 반도체 설계 연구실
IPRS
2021 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4H-SiC based ESD protection optimized for high voltage applications with Segment topology
KU302H1122
4H-SiC based ESD protection optimized for high voltage applications with adjustable N+ region
KU302H1121
4H-SiC based ESD protection optimized for high voltage applications with adjustable gate length
KU302H1120
4H-SiC MOSFET-based ESD Protection Device with Improved Snapback using body floating for 70V application
KU302H1077
4H-SiC MOSFET-based ESD Protection Device with Improved Holding Voltage using gate floating for 80V application
KU302H1076
4H-SiC MOSFET-based ESD protection device with improved snapback using gate body triggering technology for 100V application
KU302H1075
4H-SiC MOSFET-based ESD protection device with improved snapback using gate body triggering technology for 90V application
KU302H1074
4H-SiC MOSFET-based 4-Stacked ESD protection device with improved snapback using segment topology for 450V application
KU302H1073
4H-SiC MOSFET-based 3-Stacked ESD protection device with improved snapback using segment topology for 350V application
KU302H1072
4H-SiC MOSFET-based 2-Stacked ESD protection device with improved snapback using segment topology for 200V application
KU302H1071
2020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SCR-based ESD protection device with high holding voltage using segment topology for 150V application in 4H-SiC process
KU302H1047
SCR-based ESD protection device with high holding voltage using N-drift region for 120V application in 4H-SiC process
KU302H1046
NMOSFET-based ESD protection device with improved snapback using gate body floating technology for 100V application in 4H-SiC process
KU302H1045
A Gate-Body Floating NMOSFET with high holding voltage for High voltage esd protection in 0.18 Hynix BCD Process
KU302H1039
A SCR based ESD Protection device with Dual-Directional using N-bridge region in 0.18 hynix process
KU302H1038
A SCR based ESD Protection device with Dual-Directional and improved snapback performance in 0.18 hynix process
KU302H1037
A Dual Directional GBFNMOS based ESD Protection device with high holding voltage in 0.18 Hynix BCD Process
KU302H1036
SCR based ESD Protection circuit with additional NPN path using skhynix 0.18um process
KU302H1030
SCR based ESD Protection circuit with additional implant using skhynix 0.18um process
KU302H1031
SCR based ESD Protection circuit with floating well region technology using skhynix 0.18um process
KU302H1032
Dual Directional SCR based ESD Protection circuit with gate-biasing using skhynix 0.18um process
KU302H1033
2019 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A New Dual-Direction SCR ESD protection circuit with High Holding Voltage and Low Dynamic Resistance in SK Hynix 0.18um BCD Process
KU302H1021
A New Dual-Direction SCR with High Holding Voltage and Low Dynamic Resistance in SK Hynix 0.18um BCD Process
KU302H1020
A Dual-Direction SCR-based ESD protection circuit with High Holding Voltage and Low Dynamic Resistance in SK Hynix 0.18um BCD Process
KU302H1019
A SCR-based ESD protection circuit with high holding voltage for 5V application in SK Hynix 0.18um BCD Process
KU302H0997
A SCR-based ESD protection circuit using additional parasitic NPN BJT with high robustness and high holding voltage in SK Hynix 0.18um BCD Process
KU302H0995
A SCR-based ESD protection circuit using additional parasitic NPN BJT with high robustness in SK Hynix 0.18um BCD Process
KU302H0994
A dual-directional ESD protection circuit with low dynamic-resistance for 5V application in SK Hynix 0.18um BCD Process
KU302H0993
2018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A Dual Directional SCR-based ESD protection circuit with high robustness in SK Hynix 0.18um BCD Process
KU302H0944
2017 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A SCR-based ESD protecion circuit with high robustness and high holding voltage in SK Hynix 0.18um BCD Process
KU302H0921
Whole-chip All-directional ESD protecion with SCR-based IO for 12V application in Dongbu HiTeck 0.18um BCD Process
KU302H0920
A SCR-based ESD protection circuit with high robustness and high holding voltage using the double triggered Penta well
KU302H0919
A SCR-based ESD protection circuit with high robustness and high holding voltage using penta well in SK Hynix 0.18um BCD Process
KU302H0918
A SCR-based ESD protection device with high robustness using the added PNP parasitic BJT in Dongbu 0.18um BCD Process
KU302H0888
A SCR-based ESD protection device with high robustness and high holding voltage using penta well in Dongbu 0.18um BCD Process
KU302H0887
A SCR-based ESD protection device with high robustness and low trigger voltage using the added parasitic NPN-BJT in SK Hynix 0.18um BCD Process
KU302H0886
Solenoid Driver IC D302
KU302H0874
A SCR-based ESD protection circuit with high robustness using the added parasitic NPN in Dongbu 0.18um BCD Process
KU302H0871
A SCR-based ESD protection circuit with low Ron and high robustness in Dongbu 0.18um BCD Process
KU302H0870
A SCR-based ESD protection circuit with low Ron and high robustness in Dongbu 0.18um BCD Process
KU302H0870
BLDC Motor Driver IC D1
KU302H0861
2016 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Double triggered SCR-based ESD protection circuit with high robustness in Dongbu 0.18um BCD Process
KU302H0743
2015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MOS-Triggered SCR based ESD protection Circuit with Low Trigger Voltage and High holding voltage in Sk Hynix 0.18um BCD Process
KU302H0675
Diode-Triggered SCR based ESD circuit with high holding voltage in Dongbu 0.18um BCD Process
KU302H0674
MOS-Triggered SCR based ESD protection Circuit with Low Trigger Voltage and High holding voltage in XFAB 1um SOI Process
KU302H0673
A Capacitor-less LDO Regulator with Fast Transient Response Characteristics Using a Dual Control Path
KU302S0665
2014 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MOS_Triggered ESD Protection device with Low Trigger Voltage in Dongbu 0.18um BCD Process
KU129H0618
MOS_based ESD Protection device with Low Trigger Voltage in SK Hynix 0.18um BCD Process
KU129H0617
Low Voltage ESD Protection Circuit using SCR-based structure with high robustness in Dongbu 0.18um BDC Process
KU129H0616
ESD Protection Circuit using SCR-based structure with high robustness and high holding voltage in SK Hynix 0.18um BDC Process
KU129H0615
ESD Protection Circuit using SCR-based structure with high robustness and high holding voltage in Dongbu 0.18um BDC Process
KU129H0614
3Stacked NPN-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD Process
KU129H0613
ESD Protection Circuit using Body Floating MOS-based Structure
KU129H0553
High Efficiency Dual Mode PWM / Linear Buck Converter with Wide-Input Range
KU129S0552
MOS-Triggered ESD Protection Circuit using SCR-based Structure
KU129H0551
2Stacked LIGBT-based ESD Protection Circuit for High Voltage Appliication in SK Hynix 0.18um BCD Process
KU129H0550
Low-Dropout Voltage Regulator with Adaptive threshold voltage technique
KU129S0549
2013 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage ESD Protection Circuit using SCR-based structure in Dongbu 0.18um BDC Process
KU129H0442
2Stacked NPN-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD Proces
KU129H0441
LIGBT-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD Process
KU129H0440
3Stacked SCR-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process
KU129H0389
3Stacked NPN-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process
KU129H0388
2Stacked SCR-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process
KU129H0387
2Stacked NPN-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process
KU129H0386
LDO Voltage Regulator with Current limiting Characteristics
KU129S0385
Low-area LDO Regulator using Body-driven Technique
KU129S0384
Low Dropout Voltage Regulator With Multiple Error AMPs
KU129S0383
SCR-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD process
KU129H0382
SCR-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD process
KU129H0381
NPN-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process
KU129H0380
NPN-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD Process
KU129H0379
2012 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Low Dropout Voltage Regulator of having Multiple Error AMPs
KS129S0256
LDO Regulator using Body-driven Technique
KS129H0255
High voltage SCR-based ESD Protection device in Hynix 0.18um BCD process
KS129H0254
LIGBT-based high voltage ESD Protection device in TSMC 0.18um CMOS process
KS129H0252
High voltage ESD Protection circuit using LIGBT in TSMC 0.18um CMOS process
KS129H0251
NPN-based High voltage ESD Protection device in Dongbu 0.18um BCD process
KS129H0250
SCR-based high voltage ESD Protection device in Dongbu 0.18um BCD process
KS129H0249
High Voltage ESD Protection Circuit using 3Stacked STNMOS in Dongbu 0.35um BCD process
KU129H0206
I/O & Power clamp ESD protection circuits using MPTSCR in Dongbu 0.35um process
KU129H0205
High voltage ESD Protection Circuit using 4 Stacked SCR-based Structure in TSMC 0.18um Process
KU129H0204
High voltage ESD Protection Circuit using 2 Stacked SCR-based Structure in TSMC 0.18um Process
KU129H0202
High Voltage ESD Protection Circuit using 2Stacked HHVSCR in Dongbu 0.35um BCD process
KU129H0201
High Voltage ESD Protection Circuit using 2Stacked STNMOS in Dongbu 0.35um BCD process
KU129H0200
SCR-based ESD Protection device with high holding voltage in TSMC 0.13um CMOS process
KU129H0199
I/O & Power clamp ESD protection circuits using gate substrate trigger technique in Magnachip 0.18um process
KU129H0198
I/O & Power clamp ESD protection circuit using floating body technique in TSMC 65nm process
KU129H0197