IPRS

2019   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A New Dual-Direction SCR ESD protection circuit with High Holding Voltage and Low Dynamic Resistance in SK Hynix 0.18um BCD Process

KU302H1021

A New Dual-Direction SCR with High Holding Voltage and Low Dynamic Resistance in SK Hynix 0.18um BCD Process

KU302H1020

A Dual-Direction SCR-based ESD protection circuit with High Holding Voltage and Low Dynamic Resistance in SK Hynix 0.18um BCD Process

KU302H1019

A SCR-based ESD protection circuit with high holding voltage for 5V application in SK Hynix 0.18um BCD Process

KU302H0997

A SCR-based ESD protection circuit using additional parasitic NPN BJT with high robustness and high holding voltage in SK Hynix 0.18um BCD Process

KU302H0995

A SCR-based ESD protection circuit using additional parasitic NPN BJT with high robustness in SK Hynix 0.18um BCD Process

KU302H0994

A dual-directional ESD protection circuit with low dynamic-resistance for 5V application in SK Hynix 0.18um BCD Process

KU302H0993

2018   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A Dual Directional SCR-based ESD protection circuit with high robustness in SK Hynix 0.18um BCD Process

KU302H0944

2017   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A SCR-based ESD protecion circuit with high robustness and high holding voltage in SK Hynix 0.18um BCD Process

KU302H0921

Whole-chip All-directional ESD protecion with SCR-based IO for 12V application in Dongbu HiTeck 0.18um BCD Process

KU302H0920

A SCR-based ESD protection circuit with high robustness and high holding voltage using the double triggered Penta well

KU302H0919

A SCR-based ESD protection circuit with high robustness and high holding voltage using penta well in SK Hynix 0.18um BCD Process

KU302H0918

A SCR-based ESD protection device with high robustness using the added PNP parasitic BJT in Dongbu 0.18um BCD Process

KU302H0888

A SCR-based ESD protection device with high robustness and high holding voltage using penta well in Dongbu 0.18um BCD Process

KU302H0887

A SCR-based ESD protection device with high robustness and low trigger voltage using the added parasitic NPN-BJT in SK Hynix 0.18um BCD Process

KU302H0886

Solenoid Driver IC D302

KU302H0874

A SCR-based ESD protection circuit with high robustness using the added parasitic NPN in Dongbu 0.18um BCD Process

KU302H0871

A SCR-based ESD protection circuit with low Ron and high robustness in Dongbu 0.18um BCD Process

KU302H0870

A SCR-based ESD protection circuit with low Ron and high robustness in Dongbu 0.18um BCD Process

KU302H0870

BLDC Motor Driver IC D1

KU302H0861

2016   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Double triggered SCR-based ESD protection circuit with high robustness in Dongbu 0.18um BCD Process

KU302H0743

2015  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MOS-Triggered SCR based ESD protection Circuit with Low Trigger Voltage and High holding voltage in Sk Hynix 0.18um BCD Process

KU302H0675

Diode-Triggered SCR based ESD circuit with high holding voltage in Dongbu 0.18um BCD Process

KU302H0674

MOS-Triggered SCR based ESD protection Circuit with Low Trigger Voltage and High holding voltage in XFAB 1um SOI Process

KU302H0673 

A Capacitor-less LDO Regulator with Fast Transient Response Characteristics Using a Dual Control Path

KU302S0665

2014  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MOS_Triggered ESD Protection device with Low Trigger Voltage in Dongbu 0.18um BCD Process

KU129H0618

MOS_based ESD Protection device with Low Trigger Voltage in SK Hynix 0.18um BCD Process

KU129H0617

Low Voltage ESD Protection Circuit using SCR-based structure with high robustness in Dongbu 0.18um BDC Process

KU129H0616

ESD Protection Circuit using SCR-based structure with high robustness and high holding voltage in SK Hynix 0.18um BDC Process

KU129H0615

ESD Protection Circuit using SCR-based structure with high robustness and high holding voltage in Dongbu 0.18um BDC Process

KU129H0614

3Stacked NPN-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD Process

KU129H0613

ESD Protection Circuit using Body Floating MOS-based Structure

KU129H0553

High Efficiency Dual Mode PWM / Linear Buck Converter with Wide-Input Range

KU129S0552

MOS-Triggered ESD Protection Circuit using SCR-based Structure

KU129H0551

2Stacked LIGBT-based ESD Protection Circuit for High Voltage Appliication in SK Hynix 0.18um BCD Process

KU129H0550

Low-Dropout Voltage Regulator with Adaptive threshold voltage technique

KU129S0549

2013   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

High Voltage ESD Protection Circuit using SCR-based structure in Dongbu 0.18um BDC Process

KU129H0442

2Stacked NPN-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD Proces

KU129H0441

LIGBT-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD Process

KU129H0440

3Stacked SCR-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process

KU129H0389

3Stacked NPN-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process

KU129H0388

2Stacked SCR-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process

KU129H0387

2Stacked NPN-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process

KU129H0386

LDO Voltage Regulator with Current limiting Characteristics

KU129S0385

Low-area LDO Regulator using Body-driven Technique

KU129S0384

Low Dropout Voltage Regulator With Multiple Error AMPs

KU129S0383

SCR-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD process

KU129H0382

SCR-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD process

KU129H0381

NPN-based ESD Protection Circuit for High Voltage Application in SK Hynix 0.18um BCD Process

KU129H0380

NPN-based ESD Protection Circuit for High Voltage Application in Dongbu 0.18um BCD Process

KU129H0379

2012  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Low Dropout Voltage Regulator of having Multiple Error AMPs

KS129S0256

LDO Regulator using Body-driven Technique

KS129H0255

High voltage SCR-based ESD Protection device in Hynix 0.18um BCD process

KS129H0254

LIGBT-based high voltage ESD Protection device in TSMC 0.18um CMOS process

KS129H0252

High voltage ESD Protection circuit using LIGBT in TSMC 0.18um CMOS process

KS129H0251

NPN-based High voltage ESD Protection device in Dongbu 0.18um BCD process

KS129H0250

SCR-based high voltage ESD Protection device in Dongbu 0.18um BCD process

KS129H0249

High Voltage ESD Protection Circuit using 3Stacked STNMOS in Dongbu 0.35um BCD process

KU129H0206

I/O & Power clamp ESD protection circuits using MPTSCR in Dongbu 0.35um process

KU129H0205

High voltage ESD Protection Circuit using 4 Stacked SCR-based Structure in TSMC 0.18um Process

KU129H0204

High voltage ESD Protection Circuit using 2 Stacked SCR-based Structure in TSMC 0.18um Process

KU129H0202

High Voltage ESD Protection Circuit using 2Stacked HHVSCR in Dongbu 0.35um BCD process

KU129H0201

High Voltage ESD Protection Circuit using 2Stacked STNMOS in Dongbu 0.35um BCD process

KU129H0200

SCR-based ESD Protection device with high holding voltage in TSMC 0.13um CMOS process

KU129H0199

I/O & Power clamp ESD protection circuits using gate substrate trigger technique in Magnachip 0.18um process

KU129H0198

I/O & Power clamp ESD protection circuit using floating body technique in TSMC 65nm process

KU129H0197

Dankook University Semiconductor Design Laboratory | Address : Room 402, No. 2 Engineering Building, 152, Jukjeon-ro, Suji-gu, Yongin-si, Gyeonggi-do, Republic of Korea

Laboratory-1(Professor) :  Room 402, No. 2 Engineering Building | TEL +82-31-8005-3625

Laboratory-2 :  Room 417, No. 2 Engineering Building  | TEL +82-31-8005-3643