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A Novel Low Dynamic Resistance Dual -Directional SCR with High Holding Voltage for 12 V Applications
IEEE Transactions on Device and MaterialsReliability
JULY 2020
"A New SCR Structure With High Holding Voltage and Low ON-Resistance for 5-V Applications"
IEEE TRANSACTIONS ON ELECTRON DEVICES
MARCH 2020
"Study on 4H-SiC GGNMOS Based ESD Protection Circuit With Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications"
IEEE ELECTRON DEVICE LETTERS
FEBRUARY 2019